Ningjiao Zhang is a Patent Engineer whose technical area of expertise is electrical engineering and who has been granted limited recognition by the USPTO, having passed the U.S. Patent Bar. She graduated from Tianjin University, China in 2011 with a B.S. degree in electrical engineering and with a specialization in optoelectronics. She then earned her M.S. degree from the Ohio State University’s electrical and computer engineering (ECE) department with a specialization in solid state devices. Her graduate research focused on the characterization of high power high frequency III-V semiconductor devices, and included physical simulation and computer modeling of these devices. Her master’s degree thesis related to the study of low frequency noise in AlGaN/GaN HEMTs. Ningjiao is fluent in Chinese and English.